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PD - 9.1245B
PRELIMINARY
IRF7403
8 7
HEXFET(R) Power MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
S S S G
1 2
A A D D D D
VDSS = 30V
3
6
4
5
RDS(on) = 0.022
T op V iew
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ,TSTG 10 Sec. Pulsed Drain Current, V GS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
9.7 8.5 5.4 34 2.5 0.02 20 5.0 -55 to + 150
Units
A W W/C V V/ns C
Thermal Resistance Ratings
Parameter
RJA Maximum Junction-to-Ambient
Typ.
---
Max.
50
Units
C/W
8/25/97
IRF7403
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 30 --- --- --- 1.0 8.4 --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.024 --- --- --- --- --- --- --- --- --- --- --- 10 37 42 40 2.5 4.0
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.022 VGS = 10V, ID = 4.0A 0.035 VGS = 4.5V, ID = 3.4A --- V VDS = VGS, I D = 250A --- S VDS = 15V, ID = 4.0A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C 100 V GS = 20V nA -100 VGS = -20V 57 ID = 4.0A 6.8 nC VDS = 24V 18 V GS = 10V, See Fig. 6 and 12 --- VDD = 15V --- ID = 4.0A ns --- RG = 6.0 --- RD = 3.7, See Fig. 10
D
--- nH ---
Between lead tip and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
G
S
--- 1200 --- --- 450 --- --- 160 ---
pF
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 3.1 showing the A G integral reverse --- --- 34 p-n junction diode. S --- --- 1.0 V TJ = 25C, IS = 2.0A, VGS = 0V --- 52 78 ns TJ = 25C, IF = 4.0A --- 93 140 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%.
I SD 4.0A, di/dt 180A/s, VDD V(BR)DSS,
TJ 150C
Surface mounted on FR-4 board, t 10sec.
IRF7403
1000
I , D ra in -to -S o u rce C u rre n t (A ) D
100
I , D ra in -to -S o u rce C u rre n t (A ) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP
1000
VGS 15V 10V 8. 0V 7. 0V 6. 0V 5. 5V 5. 0V BOTT OM 4.5V TOP
100
4.5V
4.5 V
10
10
1 0.01
20 s P UL SE W ID TH TJ = 25C
0.1 1 10
A
100
1 0.01
20 s PU L SE W ID TH TJ = 1 50 C
0.1 1 10
A
100
V D S , Drain-to-Source V oltage (V )
V D S , Drain-to-S ource V oltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n c e (N o rm a liz e d )
1000
2.0
I D = 6.7 A
I D , Drain-to-Source Current (A)
1.5
TJ = 25 C
100
1.0
TJ = 150 C
0.5
10 4 5 6 7
V DS = 50V 15V 20s PULSE WIDTH 8 9 10
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160
A
VGS , Gate-to-Source Voltage (V)
T J , Junction T emperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRF7403
2400
2000
1600
C i ss C o ss
1200
V G S , G a te -to -S o u rc e V o lta g e (V )
V GS C iss C rss C oss
= = = =
0V, f = 1M H z C gs + C gd , C ds SH O R TED C gd C ds + C gd
20
I D = 4.0A VDS = 2 4V
16
C , C a p a c ita n c e (p F )
12
8
800
C rs s
400
4
0 1 10 100
A
0 0 10 20 30
FO R TES T C IR CU IT SEE FIG U RE 12
40 50 60
A
V D S , Drain-to-Source V oltage (V)
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
IS D , R e ve rs e D ra in C u rre n t (A )
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
ID , Drain Current (A)
100us
TJ = 1 50 C
TJ = 25 C
10 1ms
1
0.1 0.0 0.5 1.0 1.5 2.0
VG S = 0 V
2.5
A
3.0
1 0.1
TA = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
V S D , Source-to-Drain Voltage (V )
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRF7403
VDS
10.0
RD
VGS RG
D.U.T.
+
- VDD
8.0
I D , Drain Current (A)
10 V
Pulse Width 1 s Duty Factor 0.1 %
6.0
Fig 10a. Switching Time Test Circuit
4.0
VDS 90%
2.0
0.0 25 50 75 100 125 150
T C , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10b. Switching Time Waveforms
100
(Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100
10
Thermal Response
0.1 0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7403
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
IRF7403
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS*
**
* dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ -
VDD
*
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[ VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For N-Channel HEXFETS
IRF7403
Package Outline
SO-8 Outline Dimensions are shown in millimeters (inches)
INCHES
D -B-
MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99
DIM
5
MIN .0532 .0040 .014 .0075 .189 .150
MAX .0688 .0098 .018 .0098 .196 .157
A
6 5 H 0.25 (.010) M AM
5
8 E -A-
7
A1 B C D E
1
2
3
4
e 6X
K x 45 e1 A
e e1 H K L
.050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8
0.10 (.004) 6
-CB 8X 0.25 (.010) A1 M CASBS
L 8X
C 8X
RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6 MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X
6.46 ( .255 )
1.78 (.070) 8X
Part Marking Information
SO-8
E X A M P LE : TH IS IS A N IR F 7 101 D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X W AFER LO T C O D E (LA S T 4 D IG IT S )
3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O F 7 101
T OP
PART NUMBER
B O T TO M
IRF7403
Tape & Reel Information
SO-8 Dimensions are shown in millimeters (inches)
1 .8 5 (. 07 2) 4 .1 0 (. 16 1) 1 .6 5 (. 06 5) 3 .9 0 (. 15 4) 1 .60 (. 06 2) 1 .50 (. 05 9) 0 .35 (.0 13 ) 0 .25 (.0 10 )
T E R M IN AT IO N NU MB E R 1
2 .0 5 (. 08 0) 1 .9 5 (. 07 7)
1
5.5 5 (. 21 8) 5.4 5 (. 21 5)
5.3 0 (. 20 8) 5.1 0 (. 20 1)
12 .30 (.4 8 4) 11 .70 (.4 6 1)
F E E D D IR EC T IO N
8.1 0 (.31 8) 7.9 0 (.31 1) 6 .5 0 (.25 5) 6 .3 0 (.24 8)
2.6 0 (.1 02 ) 1.5 0 (.0 59 ) 2 .20 (.0 8 6) 2 .00 (.0 7 9)
1 3. 20 (.5 19 ) 1 2. 80 (.5 04 )
1 5. 40 (.6 07 ) 1 1. 90 (.4 69 ) 2
3 30 .00 (13 .00 0) MAX.
50 .0 0 (1.9 69 ) M IN .
N O TE S : 1 C O N F O R M S T O E IA-4 81 -1 2 IN C L U D ES F LA N G E D IS T O R T IO N @ O U T E R E D G E 3 D IM E N SIO N S M E AS U R E D @ H U B 4 C O N T R O L LIN G D IM EN S IO N : M E T R IC
1 4. 40 (.5 66 ) 1 2. 40 (.4 48 ) 3
18 .4 0 (.72 4) MAX 3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

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